Vishay has introduced 16 new 650 V and 1200 V SiC Schottky diodes in the industry-standard SOT-227 package. Designed to ...

At the University of Glasgow’s James Watt Nanofabrication Centre, the team used surface chemistry techniques to improve the ...

Mitsubishi Electric's European subsidiary Mitsubishi Electric R&D Centre Europe BV will begin developing a prototype to demonstrate a junction-temperature estimation technology for SiC power modules, ...

Forvia Hella, an international automotive supplier, has selected Infineon's new CoolSiC automotive MOSFET 1200 V for its next ...

While USB-C chargers and adapters have been the forerunners, GaN is now on its way to reaching tipping points in its adoption in further industries, substantially driving the market for GaN-based ...

Dr. Ismail Kashkoush, JST’s new Chief Technology Officer, shares his thoughts as to the challenges and opportunities of his new job role - overseeing the development and strategy for JST’s engineering ...

Infineon Technologies is added new isolated gate driver ICs for electric vehicles to its EiceDRIVER family.

Chinese GaN firm Innoscience and its subsidiary Innoscience (Suzhou) Semiconductor have filed a lawsuit against Infineon Technologies (China), its subsidiary Infineon Technologies (Wuxi) and a ...

According to Mi2-factory, chip producers buy EFII to save costs, increase performance increase and enable design innovations ...

Element Six (E6), a developer of synthetic diamond material solutions, will launch an innovative Cu-diamond product at ...

By delivering a dramatic increase in the current density of AlN Schottky barrier diodes, the team is helping these devices to ...

Nordic Semiconductor has announced a further addition to its nPM family of Power Management ICs (PMICs), for wireless mice ...