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Hosted on MSNKioxia's new 10th gen 332-layer 4.8 GB/s 3D NAND flash is 33% faster than its 8th gen ICsKioxia's 10th generation 332-layer 3D NAND flash is up to 33% faster than prior-gen NAND, boasted the company at ISSCC 2025.
The lifespan of data on a USB flash drive depends on many factors: Under ideal conditions, data should remain preserved on a ...
SanDisk separating from WDC, shows next generation storage capacity announcements, predicts undersupply by 2H 2025 and announces up to 128TB data center QLC SSDs.
Three new microcontrollers (MCUs) are joining STMicroelectronics’ STM32C0 series, giving designers more flexibility with ...
Kioxia Corporation and Sandisk Corporation have pioneered a state-of-the-art 3D flash memory technology, setting the industry benchmark with a 4.8Gb/s NAND interface speed, superior power efficiency, ...
Japanese NAND Flash manufacturer Kioxia unveiled its latest advancement in NAND flash memory technology on February 20, ...
TOKYO -- Japanese chipmaker Kioxia Holdings has developed NAND flash memory technology with higher storage capacity and 33% faster interface speed, anticipating strong demand from artificial ...
The oversupply of NAND flash has forced memory chipmakers to implement production cuts in response to lower-than-expected orders from PC and smartphone manufacturers. Major players in ...
Winbond Electronics Corp (華邦電) yesterday said demand for its tailor-made DRAM and NOR flash memory chips is expected to ...
Everspin Technologies (MRAM) announced that its PERSYST MRAM is now validated for configuration across all Lattice Semiconductor Field ...
Companies Preview 10th Generation 3D Flash Memory Technology Setting A New Benchmark for Performance, Power Efficiency and Bit Density Kioxia Corporation and Sandisk Corporation have pioneered a ...
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