Samsung Foundry's second-gen 3nm yield, at 20%, is costing Samsung some business from major fabless chip designers like ...

Following Intel's initial success, Samsung and TSMC developed their own FinFET chips, advancing the technology to 16 nm and 14 nm nodes. Now, the industry is moving towards Gate-All-Around (GAA ...

It is developed with TSMC 12nm 0.8V/1.8V CMOS LOGIC FinFET Compact Process. Different ... IGMTLSY01A is a synchronous LVTLL / LVT / ULVT periphery high-density ternary content addressable memory (TCAM ...

TSMC’s N2 node introduces the gate-all-around GAA transistor structure, a significant technological leap that will drive better power efficiency and performance compared to the current FinFET ...

It is developed with TSMC 16nm 0.8V/1.8V CMOS LOGIC FinFET Compact process. Different combinations ... TCAM can search for data that matches the input in one cycle from all the information stored in ...

After FinFET comes gate all around, or GAA, which will be adopted on TSMC's 2 nm and Samsung's 3 nm nodes. Successive technologies improve electrical performance and miniaturization to fit as many ...

Fin field-effect transistor, or FinFET, is used up to TSMC’s 3nm and Samsung’s 5nm nodes. Gate all-around, or GAA, will succeed FinFET, but UMC has no plans to pursue GAA due to cost concerns.

Intel's flagship "Arrow Lake" CPU, the Core Ultra 9 285K, delivers reduced power consumption, dedicated AI silicon, and promising platform improvements. The one big question mark: Its performance is ...

FMI forecasts indicate that the global insulated gate bipolar transistors (IGBT) market size is set to reach a valuation of ...

At this time, I would like to welcome everyone to the KLA Corporation's September Quarter 2024 Earnings Conference Call and Webcast. All participant lines have been placed in a listen-only mode to ...