News

Designed for extreme environments and conditions, radiation-hardened MOSFETs are available from 100 Krad to 300 Krad Total ...
The latest graphics processing units (GPUs), such as the Blackwell B100 and B200 at the heart of NVIDIA’s latest AI ...
The advancement of high-level data processing technologies and the acceleration of digital transformation have increased the ...
Technology announces its completion of its family of radiation-hardened power MOSFETs to the MIL-PRF-19500/746 slash-sheet ...
A new compact package design enables a 65% larger die size, unlocking ultra-low ON-resistance and wide SOA capability—ideal ...
Taiwan Semi’s latest single- and dual-output, automotive-grade devices offer what’s claimed as the industry’s best figure of ...
The new MOSFET arrays extend the reach to higher-voltage supercapacitors to better serve backup power systems.
Microchip Technology has announced the completion of its radiation-hardened power MOSFETs, achieving JANSF qualification for the JANSF2N8587U3 model, which can withstand up to 300 Krad (Si ...
Microchip has achieved JANSF qualification for a 100V n-channel mosfet to to 300krad (Si) TID (total ionising dose), and completed its family of ...
ROHM has developed N-channel power MOSFETs with industry-leading low ON resistance and wide SOA capability. They are designed for power supplies inside high-performance enterprise and AI servers.
Vishay Intertechnology, Inc. has introduced a new Gen 4.5 650 V E series power metal-oxide semiconductor field-effect ...
ALD’s ALD910030 SAB MOSFET array delivers auto-balancing capabilities and power management to 2.8-V to 3.3-V supercapacitors.