Designed for extreme environments and conditions, radiation-hardened MOSFETs are available from 100 Krad to 300 Krad Total ...

A new compact package design enables a 65% larger die size, unlocking ultra-low ON-resistance and wide SOA capability—ideal ...

Technology announces its completion of its family of radiation-hardened power MOSFETs to the MIL-PRF-19500/746 slash-sheet ...

Taiwan Semi’s latest single- and dual-output, automotive-grade devices offer what’s claimed as the industry’s best figure of ...

Vishay Intertechnology, Inc. has introduced a new Gen 4.5 650 V E series power metal-oxide semiconductor field-effect ...

The latest graphics processing units (GPUs), such as the Blackwell B100 and B200 at the heart of NVIDIA’s latest AI ...

Looking at a full-bridge circuit board with a shoot-through issue and demonstrating the fix with a simple SPICE simulation.

ROHM Semiconductor has developed N-channel power MOSFETs featuring industry-leading* low ON-resistance and wide SOA capability. They are designed for power supplies inside high-performance enterprise ...

Microchip Technology has announced the completion of its radiation-hardened power MOSFETs, achieving JANSF qualification for the JANSF2N8587U3 model, which can withstand up to 300 Krad (Si ...

The portfolio of 1200V SiCPAK power modules, enabled by advanced epoxy-resin potting technology, are engineered to withstand ...

Santa Clara, CA and Kyoto, Japan, April 10, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor has developed N-channel power MOSFETs featuring industry-leading* low ON-resistance and wide SOA capability.