SemiQ has released three 1.2kV three-phase silicon carbide mosfet ... Power in this list is the maximum allowable when the case is at 25°C and the junctions are at their maximum of 175°C. Each is ...

Breakthroughs in processes have enabled the production of silicon carbide wafers of suitable quality for high-power use. Until recently, however, silicon carbide wasn’t viable as a semiconductor ...

Toshiba has developed a 2,200 V silicon carbide (SiC) MOSFET for inverters and energy storage systems, in order to help inverter manufacturers to reduce the size and weight of their products.

SemiQ has released three 1.2kV three-phase silicon carbide mosfet ... Power in this list is the maximum allowable when the case is at 25°C and the junctions are at their maximum of 175°C. Each is ...

While silicon (Si) is currently the most widely used material for power semiconductors in electric vehicles and space ...

The new portfolio of 1200V SiCPAK™ power modules, enabled by advanced epoxy-resin potting technology, are engineered to withstand high-humidity environments by preventing moisture ingression and ...